Multifunctional Flexible PVDF-TrFE/BaTiO3 Based Tactile Sensor for Touch and Temperature Monitoring

This paper presents an enhanced piezoelectricity based sensor for touch and temperature sensing. The sensor is realized over flexible polyimide film, making it suitable for application like e-skin. The sensing material is composed of Polyvinylidene Fluoride-Trifluoroethylene (PVDF-TrFE) and Barium Titanate (BaTiO3) nanoparticles. While, the piezoelectric polymer PVDF-TrFE ensures the flexibility of sensor, BaTiO3 imparts high sensitivity to touch and temperature. The sensor is tested over temperature range which is common in daily life and the sensitivity to touch is characterized by tapping mode using fixed load. The results confirms the advantage of using poly-ceramic composite over piezoelectric polymer

Device Modelling of Silicon Based High-Performance Flexible Electronics

The area of flexible electronics is rapidly expanding and evolving. With applications requiring high speed and performance, ultra-thin silicon-based electronics has shown its prominence. However, the change in device response upon bending is a major concern. In absence of suitable analytical and design tool friendly model, the behavior under bent condition is hard to predict. This poses challenges to circuit designer working in the bendable electronics field, in laying out a design that can give a precise response in a stressed condition. This paper presents advances in this direction and investigates the effect of compressive and tensile stress on the performance of NMOS and PMOS transistor and a touch sensor comprising a transistor and piezoelectric capacitor

Modeling of CMOS devices and circuits on flexible ultrathin chips

The field of flexible electronics is rapidly evolving. The ultrathin chips are being used to address the high-performance requirements of many applications. However, simulation and prediction of changes in response of device/circuit due to bending induced stress remains a challenge as of lack of suitable compact models. This makes circuit designing for bendable electronics a difficult task. This paper presents advances in this direction, through compressive and tensile stress studies on transistors and simple circuits such as inverters with different channel lengths and orientations of transistors on ultrathin chips. Different designs of devices and circuits in a standard CMOS 0.18-μm technology were fabricated in two separated chips. The two fabricated chips were thinned down to 20 μm using standard dicing-before-grinding technique steps followed by post-CMOS processing to obtain sufficient bendability (20-mm bending radius, or 0.05% nominal strain). Electrical characterization was performed by packaging the thinned chip on a flexible substrate. Experimental results show change of carrier mobilities in respective transistors, and switching threshold voltage of the inverters during different bending conditions (maximum percentage change of 2% for compressive and 4% for tensile stress). To simulate these changes, a compact model, which is a combination of mathematical equations and extracted parameters from BSIM4, has been developed in Verilog-A and compiled into Cadence Virtuoso environment. The proposed model predicts the mobility variations and threshold voltage in compressive and tensile bending stress conditions and orientations, and shows an agreement with the experimental measurements (1% for compressive and 0.6% for tensile stress mismatch)

Temperature compensated tactile sensing using MOSFET with P(VDF-TrFE)/BaTiO3 capacitor as extended gate

This work presents Poly(vinylidene fluoride – trifluoroethylene))/Barium Titanate (P(VDF-TrFE)-BT) nanocomposite based touch sensors tightly coupled with MOSFET devices in extended gate configuration. The P(VDF-TrFE)-BT nanocomposite exploits the distinct piezo and pyroelectric properties of P(VDF-TrFE) polymer matrix and BT fillers to suppress the temperature response when force and temperature are varied simultaneously. The reasons for this unique feature have been established through structural and electrical characterization of nanocomposite. The proposed touch sensor was tested over a wide range of force/pressure (0-4N)/(0-364 Pa) and temperature (26-70°C) with almost linear response. The sensitivity towards force/pressure and temperature sensor are 670 mV/N/7.36 mV/Pa and 15.34 mV/°C respectively. With this modified touch sensing capability, the proposed sensors will open new direction for tactile sensing in robotic applications

Ultra-thin silicon based piezoelectric capacitive tactile sensor

This paper presents an ultra-thin bendable silicon based tactile sensor, in a piezoelectric capacitor configuration, realized by wet anisotropic etching as post-processing steps. The device is fabricated over bulk silicon, which is thinned down to 35 μm from an original thickness of 636 μm. Dicing of thin membrane is achieved by low cost novel technique of Dicing before Etching. The piezoelectric capacitor is composed of polyvinylidene fluoride trifluoroethylene (PVDF-TrFE), which present an attractive avenue for tactile sensing as they respond to dynamic contact events (which is critical for robotic tasks), easy to fabricate at low cost and are inherently flexible. The sensor exhibits enhanced piezoelectric properties, thanks to the optimization of the poling procedure. The sensor capacitive behaviour is confirmed using impedance analysis and the electro-mechanical characterization is done using TIRA shaker setup

Ultra-thin silicon technology for tactile sensors

In order to meet the requirements of high performance flexible electronics in fast growing portable consumer electronics, robotics and new fields such as Internet of Things (IoT), new techniques such as electronics based on nanostructures, molecular electronics and quantum electronics have emerged recently. The importance given to the silicon chips with thickness below 50 μm is particularly interesting as this will advance the 3D IC technology as well as open new directions for high-performance flexible electronics. This doctoral thesis focusses on the development of silicon–based ultra-thin chip (UTC) for the next generation flexible electronics. UTCs, on one hand can provide processing speed at par with state-of-the-art CMOS technology, and on the other provide the mechanical flexibility to allow smooth integration on flexible substrates. These development form the motivation behind the work presented in this thesis. As the thickness of any silicon piece decreases, the flexural rigidity decreases. The flexural rigidity is defined as the force couple required to bend a non-rigid structure to a unit curvature, and therefore the flexibility increases. The new approach presented in this thesis for achieving thin silicon exploits existing and well-established silicon infrastructure, process, and design modules. The thin chips of thicknesses ranging between 15 μm – 30 μm, were obtained from processed bulk wafer using anisotropic chemical etching. The thesis also presents thin wafer transfer using two-step transfer printing approach, packaging by lamination or encapsulation between two flexible layerand methods to get the electrical connections out of the chip. The devices realised on the wafer as part of front-end processing, consisted capacitors and transistors, have been tested to analyse the effect of bending on the electrical characteristics. The capacitance of metal-oxide-semiconductor (MOS) capacitors increases by ~5% during bending and similar shift is observed in flatband and threshold voltages. Similarly, the carrier mobility in the channel region of metal-oxide-semiconductor field effect transistor (MOSFET) increases by 9% in tensile bending and decreases by ~5% in compressive bending. The analytical model developed to capture the effect of banding on device performance showed close matching with the experimental results. In order to employ these devices as tactile sensors, two types of piezoelectric materials are investigated, and used in extended gate configuration with the MOSFET. Firstly, a nanocomposite of Poly(vinylidene fluoride-co-trifluoroethylene), P(VDF-TrFE) and barium titanate (BT) was developed. The composite, due to opposite piezo and pyroelectric coefficients of constituents, was able to suppress the sensitivity towards temperature when force and temperature varied together, The sensitivity to force in extended gate configuration was measured to be 630 mV/N, and sensitivity to temperature was 6.57 mV/oC, when it was varied during force application. The process optimisation for sputtering piezoelectric Aluminium Nitride (AlN) was also carried out with many parametric variation. AlN does not require poling to exhibit piezoelectricity and therefore offers an attractive alternative for the piezoelectric layer used in devices such as POSFET (where piezoelectric material is directly deposited over the gate area of MOSFET). The optimised process gave highly orientated columnar structure AlN with piezoelectric coefficient of 5.9 pC/N and when connected in extended gate configuration, a sensitivity (normalised change in drain current per unit force) of 2.65 N-1 was obtained

Device modelling for bendable piezoelectric FET-based touch sensing system

Flexible electronics is rapidly evolving towards devices and circuits to enable numerous new applications. The high-performance, in terms of response speed, uniformity and reliability, remains a sticking point. The potential solutions for high-performance related challenges bring us back to the timetested silicon based electronics. However, the changes in the response of silicon based devices due to bending related stresses is a concern, especially because there are no suitable models to predict this behavior. This also makes the circuit design a difficult task. This paper reports advances in this direction, through our research on bendable Piezoelectric Oxide Semiconductor Field Effect Transistor (POSFET) based touch sensors. The analytical model of POSFET, complimented with Verilog-A model, is presented to describe the device behavior under normal force in planar and stressed conditions. Further, dynamic readout circuit compensation of POSFET devices have been analyzed and compared with similar arrangement to reduce the piezoresistive effect under tensile and compressive stresses. This approach introduces a first step towards the systematic modeling of stress induced changes in device response. This systematic study will help realize high-performance bendable microsystems with integrated sensors and readout circuitry on ultra-thin chips (UTCs) needed in various applications, in particular, the electronic skin (e-skin)

Low Voltage Graphene FET Based Pressure Sensor

This paper presents a low voltage graphene field effect transistor (GFET) based pressure sensor. The sensor comprises of GFET connected with a piezoelectric Aluminium Nitride (AIN) capacitor in an extended gate configuration. In this configuration, the piezopotential generated across the AlN capacitor, as a result of applied pressure, appears at the gate terminal of GFET and modulates the channel current. The sensor operates at a remarkably low voltage (100 mV) and exhibits a sensitivity of about 7.18×10 -3 Pa -1 for a pressure range of 3.25-9.74 kPa. These values make the developed GFET sensor suitable for tactile skin in robotics and prosthetics and for wearable health monitoring devices

Touch sensor based on flexible AlN piezocapacitor coupled with MOSFET

This paper presents tactile sensor devices based on flexible aluminium nitride (AlN) piezocapacitor coupled with metal oxide semiconductor field effect transistor (MOSFET). The AlN exhibits piezoelectric behaviour without the typical requirement of high voltage for poling and this makes it an ideal candidate for sensor where transducer layer is integrated with MOSFET. The AlN film used here was deposited on a polyimide subsrate by room temperature RF sputtering to obtain flexible piezocapacitor. The film properties such as orientation, roughness, elemental composition and thickness were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDX) and scanning electron microscope (SEM) respectively. The tactile sensor developed by connecting the flexible AlN piezocapacitor in an extended gate configuration exhibited a sensitivity of 2.64 N-1 for a force range 0.5-3.5N. The developed sensor demonstrates a promising route towards the development of a complete CMOS compatible process for development of tactile sensors

Polydimethylsiloxane as polymeric protective coating for fabrication of ultra-thin chips

The bendable silicon-based ultra-thin chips (UTCs), with thickness below 50 μm are needed to provide high-performance flexible electronics for several emerging applications ranging from flexible displays to robotic e-skin. The UTCs from standard silicon wafer are obtained by etching the bulk material from the backside of the wafer using a wet chemical etchant. During the etching process, it is imperative to protect the front processed side from the etchant as in most cases, the etchant is incompatible with the metals and other materials used in the fabrication of devices. This paper reports a new method using polydimethylsiloxane (PDMS) as the protective coating during wet etching of silicon. The silicon sample is thinned to sub-25 μm thickness using Tetramethylammonium hydroxide (TMAH), while PDMS acting as a protective coating, which is removed after thinning by using a chemical composition involving a nucleophilic attack on siloxane bond. As a bulk material with low- temperature processing requirements, PDMS offers an interesting alternative to other commercially available materials. The presented approach offers a range of advantages compared to other polymeric materials that are being used for the above-mentioned purpose